Product Summary

The M29W640GB70ZA6E is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The M29W640GB70ZA6E features an asymmetric block architecture. The device has an array of 135 blocks, divided into 8 Parameter Blocks of 8 Kbytes each (or 4 Kwords each), and 127 Main Blocks of 64 Kbytes each (or 32 Kwords each).

Parametrics

Absolute maximum ratings:(1)Temperature Under Bias: -50 to 125 ℃;(2)Storage Temperature: -65 to 150 ℃;(3)Input or Output Voltage: -0.6 to VCC+0.6 V;(4)Supply Voltage: -0.6 to 4 V;(5)Identification Voltage: -0.6 to 13.5 V; (6)Program Voltage: –0.6 to 13.5 V.

Features

Features: (1)Supply Voltage: VCC = 2.7 to 3.6 V for Program/Erase/Read; VPP =12 V for Fast Program (optional); (2)Asynchronous Random/Page Read: Page Width: 4 words; Page Access: 25 ns; Random Access: 60 ns, 70 ns, 90 ns; (3)Fast Program commands: 2 word/4 byte Program (without VPP=12 V); 4 word/8 byte Program (with VPP=12 V); 16 word/32 byte Write Buffer; (4)Programming time: 10 μs per byte/word typical; Chip Program time: 10 s (4-word Program); (5)Memory organization: Eight 8 Kbytes Boot blocks (top or bottom)127 Main blocks, 64 Kbytes each; (6)Program/Erase controller: Embedded byte/word program algorithms.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
M29W640GB70ZA6E
M29W640GB70ZA6E
STMicroelectronics
Flash 64MB
Data Sheet
Negotiable 
M29W640GB70ZA6EP
M29W640GB70ZA6EP

IC FLASH 64MB 3V 70NS BB TFBGA48
Data Sheet
Negotiable