P89C668HBA

Product Summary

The P89C668HBA is an EPROM. The Flash can be read and written as bytes. The P89C668HBA Chip Erase operation will erase the entire program memory. The Block Erase function can erase any Flash byte block. In-System Programming and standard parallel programming are both available. On-chip erase and write timing generation contribute to a user-friendly programming interface. The P89C668HBA Flash reliably stores memory contents even after 10,000 erase and program cycles. The cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations, produces reliable cycling. The P89C668HBA uses a +5 V VPP supply to perform the Program/Erase algorithms.

Parametrics

P89C668HBA absolute maximum ratings: (1)Operating temperature under bias: 0 to +70 or –40 to +85℃; (2)Storage temperature range: –65 to +150℃; (3)Voltage on EA/VPP pin to VSS: 0 to +13.0 V; (4)Voltage on any other pin to VSS: –0.5 to +6.5 V; (5)Maximum IOL per I/O pin: 15 mA; (6)Power dissipation (based on package heat transfer limitations, not device power consumption): 1.5 W.

Features

P89C668HBA features: (1)80C51 Central Processing Unit; (2)On-chip Flash program memory with In-System Programming (ISP) and In-Application Programming (IAP) capability; (3)Boot ROM contains low level Flash programming routines for downloading via the UART; (4)Can be programmed by the end-user application (IAP); (5)Parallel programming with 87C51 compatible hardware interface; (6)to programmer; (7)Six clocks per machine cycle operation (standard); (8)12 clocks per machine cycle operation (optional); (9)Speed up to 20 MHz with 6 clock cycles per machine cycle (40 MHz equivalent performance); up to 33 MHz with 12 clocks per machine cycle; (10)Fully static operation; (11)RAM externally expandable to 64 kbytes; (12)Four interrupt priority levels; (13)Eight interrupt sources; (14)Four 8-bit I/O ports.

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