(China (Mainland))
Product Summary
The IS41C16100S-50K is a 16-bit high-performance CMOS Dynamic Random Access Memorie. It offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100S-50K ideal for use in 16-, 32-bit wide data bus systems. These features make the device ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IS41C16100S-50K is packaged in a 42-pin 400mil SOJ and 400mil 50-(44-) pin TSOP-2.
Parametrics
IS41C16100S-50K absolute maximum ratings: (1)Voltage on Any Pin Relative to GND: 5V:–1.0V to +7.0V, 3.3V:-0.5V to +4.6V; (2)Supply Voltage:5V:–1.0V to +7.0V, 3.3V:–0.5V to +4.6V; (3)Output Current:50mA; (4)Power Dissipation:1W; (5)Commercial Operation Temperature:0℃ to +70℃; (6)Industrial Operationg Temperature:–40℃ to +85℃; (7)Storage Temperature:–55℃ to +125℃.
Features
IS41C16100S-50K features: (1)Extended Data-Out (EDO) Page Mode access cycle; (2)TTL compatible inputs and outputs; tristate I/O; (3)Refresh Interval:Refresh Mode: 1,024 cycles /16 ms, RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms; (4)JEDEC standard pinout; (5)Single power supply: 5V ±10%; (6)Byte Write and Byte Read operation via two CAS; (7)Industrail Temperature Range -40℃ to 85℃.
Diagrams
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 IS41C16100 |
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IS41C16100S |
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IS41C16128 |
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IS41C16256 |
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Data Sheet |
Negotiable |
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IS41C16256C-35TLI |
ISSI |
DRAM 4M, 5V, EDO DRAM 35ns, 40 pin TSOP II |
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