(China (Mainland))
Product Summary
The 2SC4180-T1 is a NPN silicon epitaxial transistor.
Parametrics
2SC4180-T1 absolute maximum ratings: (1)collector to base voltage:120V; (2)collector to emitter voltage:120V; (3)emitter to base voltage:5.0V; (4)collector current:50mA; (5)total power dissipation at 25℃ ambient temperature:150mW; (6)junction temperature:150℃; (7)storage temperature range:-55℃ to +150℃.
Features
2SC4180-T1 features: (1)complementary to 2SA1612; (2)high DC current gain:hFE=600 typ.(VCE=6.0V, IC=1.0mA).
Diagrams
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2SC4006 |
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2SC4008 |
Other |
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Negotiable |
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